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  4. THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN

THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN

File(s)
Lien_cornell_0058O_10138.pdf (9.17 MB)
Permanent Link(s)
https://doi.org/10.7298/X4RR1WD6
https://hdl.handle.net/1813/56861
Collections
Cornell Theses and Dissertations
Author
Lien, Huai-Hsun
Abstract

Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.

Date Issued
2017-08-30
Keywords
Hall measurement
•
niobium diselenide
•
thermal conductivity
•
Raman
•
transitional metal dichacogenides
•
Physics
•
Materials Science
•
Electrical engineering
•
thin film
Committee Chair
Jena, Debdeep
Committee Member
Xing, Huili Grace
Degree Discipline
Materials Science and Engineering
Degree Name
M.S., Materials Science and Engineering
Degree Level
Master of Science
Type
dissertation or thesis

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