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BETA GALLIUM OXIDE MATERIALS PROCESSING AND DEVICE APPLICATIONS

Author
Zhang, Liheng
Abstract
β-Ga2O3 recently gained much attention for its promising future for high-power electronic devices due to its ultra-wide bandgap (~4.9 eV), high breakdown field (~8MV/cm) and commercially available high-quality single-crystal wafers. Its Baliga’s Figure of Merit (BFOM) is ~4 times as large as those of GaN and SiC for power efficiency. However, material processing is still in its infancy for high-performance devices fabrication. In this work, I explore different regions of processing conditions. Particularly, dry etching and Ohmic contact are studied and optimized for device fabrication. Electronic devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and vertical wrap-around-gate fin-shape FETs (vFinFETs) are fabricated using optimized processing conditions and achieved current modulations.
Date Issued
2017-08-30Subject
gallium oxide; material processing; Ohmic contact; semiconductor devices; Electrical engineering; Materials Science; Compound Semiconductors; dry etching
Committee Chair
Jena, Debdeep
Committee Member
Xing, Huili Grace
Degree Discipline
Materials Science and Engineering
Degree Name
M.S., Materials Science and Engineering
Degree Level
Master of Science
Type
dissertation or thesis