InGaAs has garnered considerable attention as a potential alternative to silicon for continuing progress along Moore's Law. While it has good electrical properties, it is difficult to activate silicon dopants in InGaAs. Using Laser Spike Annealing (LSA), we show that dopant activation can be improved the thermal budget of InGaAs and extended. The absolute temperature under LSA was determined using thin film Pt thermistors calibrated using a known polymer's decomposition temperature. Raman spectroscopy was used to spatially probe the InGaAs film quality and dopant activation level after furnace and LSA. CAPRES 4-point measurements confirm that values of the sheet resistance as a function of annealing temperature match well with results from the Raman analysis. We show that LSA is effective in increasing carrier activating for samples pre-anneal using rapid thermal processing techniques. Overall, this work demonstrates that LSA is effective in enhancing the electrical behavior of InGaAs.