Atomic layer deposition (ALD) has been identified as a thin film deposition technique that has the potential to meet industry demand for next-generation nanofabrication techniques. In this study, a quartz crystal microbalance (QCM) was used with a custom-built viscous flow reactor to study plasma-enhanced atomic layer deposition (PEALD) of ZrO2 and SiO2 films.A thermal ALD process with tetrakis(ethylmethylamido)zirconium(IV) (TEMAZ) and water was first studied, and yielded a growth rate of 1.1 Å/cycle. A PEALD process with TEMAZ and O2 plasma was then developed and yielded a growth rate of 0.65 Å/cycle. Two silane precursors were studied next: di(sec-butylamino)silane (DSBAS) and bis(tert-butylamino)silane (BTBAS). DSBAS and O2 plasma ALD yielded a growth rate of 1.3 Å/cycle, and BTBAS and O2 plasma ALD yielded a growth rate of 1.2 Å/cycle. These values were consistent with literature results and closely matched predicted mass uptake as calculated by ligand exchanges in each half reaction. Single cycle analysis of the BTBAS and O2 plasma ALD process suggested that each half reaction had achieved the self-limiting characteristic of ALD.