This study explores the synthesis and characterization of novel photoacid generators (PAGs) for advanced lithography applications, with a focus on enhancing the performance of resist materials in semiconductor microfabrication. The continuous scaling down of transistor sizes, as predicted by Moore’s Law, necessitates the development of high-resolution lithographic techniques, such as deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. To address challenges such as sensitivity, resolution, and line edge roughness (LER), we synthesized 15 distinct PAGs based on oxime and naphthalimide derivatives, functionalized with aryl sulfonyl chloride groups (e.g., iodo-, bromo-, chloro-, and nitro-substituted variants). These PAGs were designed to improve the chemical amplification process, enabling efficient acid generation under UV and EUV exposure, which is critical for achieving finer patterns with reduced defectivity. The synthesis involved a multi-step process, including oxime formation and subsequent sulfonylation, with products characterized using NMR, and FTIR. Additionally, we conducted ABM aligner and DUV tests to evaluate the efficiency of these PAGs, providing insights into their lithographic performance. Key results include high yields (up to 85%) for several PAGs, enhanced sensitivity demonstrated by lower required exposure doses, and improved contrast in preliminary lithographic testing. These findings suggest that the synthesized PAGs hold significant potential for advancing next- generation lithographic processes, contributing to the ongoing evolution of the semiconductor industry.