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  4. Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111)

Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111)

File(s)
knh28.pdf (6.82 MB)
Permanent Link(s)
https://doi.org/10.7298/X4FJ2DRD
https://hdl.handle.net/1813/45250
Collections
Cornell Theses and Dissertations
Author
Heinselman, Karen
Date Issued
2016-08-22
Keywords
hot-wall LPCVD
•
aluminum nitride
•
epitaxy
Committee Chair
Shealy,James Richard
Committee Member
Thompson,Michael Olgar
Lal,Amit
Degree Discipline
Materials Science and Engineering
Degree Name
Ph. D., Materials Science and Engineering
Degree Level
Doctor of Philosophy
Type
dissertation or thesis

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