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  4. Characterization Of Single Defects In Zinc Oxide

Characterization Of Single Defects In Zinc Oxide

File(s)
yp279.pdf (6.66 MB)
Permanent Link(s)
https://hdl.handle.net/1813/37147
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Cornell Theses and Dissertations
Author
Pai, Yun-Yi
Abstract

This thesis summarizes my work on characterizing isolated defects in zinc oxide (ZnO). In chapter 1, I will briefly review the major strength of quantum information processing over classical computation. I will then review the basic properties of nitrogen-vacancy centers, the most-studied point defect species in diamond, and how they motivate the search for defects of similar properties in other semiconductor materials for defect-based quantum information processing. In chapter 2, I will describe our initial study on the optical properties of successfully isolated defects in ZnO: their fluorescence spectra, excited state lifetimes, and their photodynamics including blinking. In chapter 3, I will detail my work on extending the capability of an atomic force microscope to include simultaneous imaging in a confocal geometry. In chapter 4, I will discuss possible directions for our defect studies.

Date Issued
2014-05-25
Keywords
ZnO Defects
•
Quantum Information Processing
•
AFM
Committee Chair
Fuchs, Gregory David
Committee Member
Muller, David Anthony
Degree Discipline
Applied Physics
Degree Name
M.S., Applied Physics
Degree Level
Master of Science
Type
dissertation or thesis

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