Ever since its inception in 1965, Moore’s law has served as a guiding beam for the semiconductor industry. Following this rule, researchers have succeeded in doubling the number of transistors biennially. In recent years, next-generation lithography technologies such as extreme ultraviolet lithography (EUVL) have proven to be instrumental in keeping up with this trend. The choice of photoresist for EUVL is a key factor enabling high-resolution patterning (<10 nm) in a single step process. However, in order to achieve such small feature sizes, we need to simultaneously satisfy the resolution, line edge roughness (LER), and sensitivity requirements known as RLS tradeoff. Another major concern with EUVL is the problem of stochastics variation within photoresist due to the photoelectric and molecular reactions during UV exposure. Therefore, a new approach to overcome these challenges is needed and we believe that low ceiling temperature (Tc), chain scissionable, depolymerizing photoresists are a promising option. This research focuses on the lithographic evaluation of a potential EUV photoresist containing derivatives of polyphthalaldehyde (PPA) combined with photoacid generators (PAG) and base quenchers (BQ). The role of PAG and BQ in improving the LER and resolution of the photoresist was investigated. Several ionic and non-ionic PAGs in combination with PPA were studied to evaluate the sensitivity of the photoresist. The lithography processing conditions such as UV exposure dose, post exposure baking, and non-aqueous development were systematically studied and optimized. This work aims to guide and promote the design of scissionable, depolymerizing photoresists for next-generation EUVL.