GAN HEMT CHARACTERIZATION ON CHARGE CONTROL AND ELECTRICAL TRANSPORT USING ANALYTICAL MODELS
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Gallium-Nitride (GaN), a III-V compound with high carrier mobilities, large built-in polarization charges, and good compatibility with CMOS processes, is a prominent basis for novel electronic and photonic devices. Heterostructure-field-effect transistors(HFET or HEMT) made with unintentionally-doped(UID) GaN and polar III-V(AlScN, AlYN, AlBN, .etc) ternary nitrides as barrier layers can achieve high stability and performance, enabling innovations for next-generation power electronics and RF applications. In addition, the ferroelectric properties of these nitrides in the barrier layers manifest hysteresis loops in the IV and CV characteristics, thereby providing potential novel functionalities for emerging applications. This thesis work introduces analytical models that describe and benchmark the charge-control and transport characteristics of different HEMT structures . The formation of two-dimensional electron gas(2DEG) and hole gas(2DHG) at different interfaces of a HEMT structure can be predicted analytically, allowing for efficient design of device structures and achievement of the desired electrical performance. The effect of ferroelectric barrier layers, such as AlScN and AlYN, on the overall device electrical characteristics is modeled based on PUND (positive-up-negative-down) results, which induce changes in the electrical characteristics of GaN-channel HEMT devices. The analysis of CV modeling results confirms device structural and electrical parameters such as layer thickness, barrier dielectric constant, and interface trap concentration.This work establishes a comprehensive approach for benchmarking the performance of GaN HEMTs, addressing both ideal characteristics and practical non-idealities through electrical metrology, analytical modeling, and TCAD simulation, providing design strategies for future high-efficiency GaN-based devices.