<?xml version='1.0' encoding='UTF-8'?><?xml-stylesheet href='static/style.xsl' type='text/xsl'?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-21T13:40:41Z</responseDate><request verb="GetRecord" identifier="oai:ecommons.cornell.edu:1813/56861" metadataPrefix="dim">https://ecommons.cornell.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:ecommons.cornell.edu:1813/56861</identifier><datestamp>2026-05-15T19:41:56Z</datestamp><setSpec>com_1813_35</setSpec><setSpec>col_1813_47</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="author">Lien, Huai-Hsun</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="chair">Jena, Debdeep</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="committeeMember">Xing, Huili Grace</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2018-04-26T14:16:53Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2018-04-26T14:16:53Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued">2017-08-30</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="other">ProQuest Submission ID: 10138</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="other">ProQuest Publication ID: 10604124</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">https://hdl.handle.net/1813/56861</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="doi">https://doi.org/10.7298/X4RR1WD6</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="bibid">10361538</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract">Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.</dim:field>
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   <dim:field mdschema="dc" element="subject">Hall measurement</dim:field>
   <dim:field mdschema="dc" element="subject">niobium diselenide</dim:field>
   <dim:field mdschema="dc" element="subject">thermal conductivity</dim:field>
   <dim:field mdschema="dc" element="subject">Raman</dim:field>
   <dim:field mdschema="dc" element="subject">transitional metal dichacogenides</dim:field>
   <dim:field mdschema="dc" element="subject">Physics</dim:field>
   <dim:field mdschema="dc" element="subject">Materials Science</dim:field>
   <dim:field mdschema="dc" element="subject">Electrical engineering</dim:field>
   <dim:field mdschema="dc" element="subject">thin film</dim:field>
   <dim:field mdschema="dc" element="title">THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN</dim:field>
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   <dim:field mdschema="thesis" element="degree" qualifier="discipline">Materials Science and Engineering</dim:field>
   <dim:field mdschema="thesis" element="degree" qualifier="grantor">Cornell University</dim:field>
   <dim:field mdschema="thesis" element="degree" qualifier="level">Master of Science</dim:field>
   <dim:field mdschema="thesis" element="degree" qualifier="name">M.S., Materials Science and Engineering</dim:field>
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   <dim:field mdschema="cris" element="virtual" qualifier="author">Lien, Huai-Hsun</dim:field>
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   	&lt;Title>THERMAL CONDUCTIVITY OF THIN FILM NIOBIUM DISELENIDE FROM TEMPERATURE-DEPENDENT RAMAN&lt;/Title>
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   	&lt;PublicationDate>2017-08-30&lt;/PublicationDate>
   	&lt;DOI>https://doi.org/10.7298/X4RR1WD6&lt;/DOI>
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        	&lt;DisplayName>Lien, Huai-Hsun&lt;/DisplayName>
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    &lt;Keyword>Hall measurement&lt;/Keyword>
    &lt;Keyword>niobium diselenide&lt;/Keyword>
    &lt;Keyword>thermal conductivity&lt;/Keyword>
    &lt;Keyword>Raman&lt;/Keyword>
    &lt;Keyword>transitional metal dichacogenides&lt;/Keyword>
    &lt;Keyword>Physics&lt;/Keyword>
    &lt;Keyword>Materials Science&lt;/Keyword>
    &lt;Keyword>Electrical engineering&lt;/Keyword>
    &lt;Keyword>thin film&lt;/Keyword>
   	&lt;Abstract>Niobium diselenide (NbSe2) possess a high electrical conductivity and low thermal conductivity, making it a candidate for thermoelectric devices. While the electronic properties of (NbSe2) has been relatively explored, the lateral thermal conductivity for (NbSe2) has remained unknown. In this report, we present the lateral thermal conductivity of (NbSe2) determined by nondestructive opto-thermo method utilizing micro-Raman spectroscopy. The thermal conductivity k=15(+4/-4) W/mK was obtained at room temperature and we further verified by hall measurements that (NbSe2) conducts heat mostly through electrons. The results shed lights on the potential of Niobium diselenide as a thermoelectric device.&lt;/Abstract>
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