2026-09-20T04:04:26Zhttps://ecommons.cornell.edu/server/oai/requestoai:ecommons.cornell.edu:1813/1209912026-05-15T17:53:53Zcom_1813_35col_1813_47
Combs, Burke
Engstrom, James
DiStasio, Robert
2026-04-02T19:05:23Z
2025-12
ProQuest Submission ID: 12634
ProQuest Publication ID: 32395823
https://hdl.handle.net/1813/120991
https://doi.org/10.7298/z5zt-dw10
17423390
114 pages
The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined.
2027-01-08
en
METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION
dissertation or thesis
application/pdf
Chemical Engineering
Cornell University
Master of Science
M.S., Chemical Engineering
https://hdl.handle.net/1813/59810.2
Publication
Cornell Theses and Dissertations
Combs, Burke
5893a6ea-7af3-41d7-abc6-04bcd26ab5df
embargo
embargo
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="0277b55d-9454-4881-9b8a-3bfd6ab1845d">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>en</Language>
<Title>METHODS OF AREA-SELECTIVE ATOMIC LAYER DEPOSITION OF A METAL OXIDE USING SMALL MOLECULE INHIBITORS AND COMPETITIVE ADSORPTION</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2025-12</PublicationDate>
<DOI>https://doi.org/10.7298/z5zt-dw10</DOI>
<Authors>
<Author>
<DisplayName>Combs, Burke</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<OrgUnit />
</Publisher>
</Publishers>
<Abstract>The semiconductor industry faces growing manufacturing challenges as device dimensions shrink and nanopattern complexity increases. Bottom-up deposition processes are actively being pursued to overcome scaling and conformality limits of conventional top-down approaches and lower process costs. Area-selective atomic layer deposition (AS-ALD) offers atomic-level control, excellent conformality, and precise pattern definition critical for next-generation device fabrication. Novel techniques for selectively blocking deposition on SiO2 for the AS-ALD of Al2O3 on Cu were studied. Blocking performance using a small molecule inhibitor (DMATMS) applied through pre-soak and/or cyclically in situ vs. a self-assembled monolayer (ODTS) prepared ex situ was assessed using different precursor (TMA, BDMADA-Al), co-reactant (H2O, t-BuOH), and process temperature (120, 285 °C) configurations. Pulsing a novel competitive co-adsorbate with the precursor in conjunction with cyclic reapplication of DMATMS demonstrated optimal (~99%) growth attenuation for a vapor-phase process. Finally, the capabilities of an improved reactant delivery system for plasma-enhanced ALD were determined.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>