Library

eCommons

 

DESIGN, FABRICATION, AND CHARACTERIZATION OF ALN/GAN/ALN HIGH-ELECTRON-MOBILITY TRANSISTORS

Simple item page
dc.contributor.authorHickman, Austin
dc.contributor.chairJena, Debdeep
dc.contributor.committeeMemberMolnar, Alyosha
dc.contributor.committeeMemberXing, Huili
dc.contributor.committeeMemberApsel, Alyssa
dc.date.accessioned2022-01-25T18:41:14Z
dc.date.issued2021-08
dc.description185 pages
dc.description.abstractGallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This thesis explores the aluminum nitride (AlN) platform as a candidate for future high-power, millimeter-wave (mm-wave) power am- plifiers. The AlN platform allows for optimized, highly-scaled heterostructure design with the potential for improved output power and thermal management of III-nitride amplifiers.The thesis begins with an overview of the GaN amplifier landscape, before focusing on the AlN/GaN/AlN heterostructure, laying out its advantages over the conventional and state-of-the-art GaN HEMT heterostructures. A robust large signal model, based on the Angelov model, is demonstrated and verified over the gigahertz frequencies. AlN/GaN/AlN HEMT results are explored, beginning with the measured breakdown characteristics before moving to the large signal performance of the HEMT at mm-wave frequencies. Development of and motivation for regrown ohmic contacts, T-gate contacts, and silicon ni- tride passivation are also covered. In addition to the n-channel amplifier, the progress of state-of-the-art high- current p-channel FETs, mature AlN bulk acoustic wave (BAW) filter technol- ogy, and advanced substrate-integrated waveguides (SIW), are discussed. The integration of all these components on a unifying AlN platform will unlock unprecedented integration in the III-nitride regime, with the potential for a new wave of innovation in mm-wave communication and high-power logic applica- tions.
dc.identifier.doihttps://doi.org/10.7298/803y-j898
dc.identifier.otherHickman_cornellgrad_0058F_12751
dc.identifier.otherhttp://dissertations.umi.com/cornellgrad:12751
dc.identifier.urihttps://hdl.handle.net/1813/110922
dc.language.isoen
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectAluminum Nitride
dc.subjecthigh-power amplifier
dc.subjectmillimeter-wave
dc.titleDESIGN, FABRICATION, AND CHARACTERIZATION OF ALN/GAN/ALN HIGH-ELECTRON-MOBILITY TRANSISTORS
dc.typedissertation or thesis
dcterms.licensehttps://hdl.handle.net/1813/59810
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorCornell University
thesis.degree.levelDoctor of Philosophy
thesis.degree.namePh. D., Electrical and Computer Engineering

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Hickman_cornellgrad_0058F_12751.pdf
Size:
27.41 MB
Format:
Adobe Portable Document Format
Download

Collections

Cornell Theses and Dissertations