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Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111)

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dc.contributor.authorHeinselman, Karen
dc.contributor.chairShealy,James Richard
dc.contributor.committeeMemberThompson,Michael Olgar
dc.contributor.committeeMemberLal,Amit
dc.date.accessioned2016-12-12T14:39:13Z
dc.date.available2021-08-23T06:00:19Z
dc.date.issued2016-08-22
dc.identifier.doihttps://doi.org/10.7298/X4FJ2DRD
dc.identifier.otherbibid: 9870459
dc.identifier.urihttps://hdl.handle.net/1813/45250
dc.language.isoen_US
dc.subjecthot-wall LPCVD
dc.subjectaluminum nitride
dc.subjectepitaxy
dc.titleHot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111)
dc.typedissertation or thesis
thesis.degree.disciplineMaterials Science and Engineering
thesis.degree.grantorCornell University
thesis.degree.levelDoctor of Philosophy
thesis.degree.namePh. D., Materials Science and Engineering

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