TOWARD III-NITRIDE BASED FERROELECTRIC HIGH ELECTRON MOBILITY TRANSISTORS
| dc.contributor.author | Lee, Hyunjea | |
| dc.contributor.chair | Xing, H. Grace | |
| dc.contributor.committeeMember | Jena, Debdeep | |
| dc.contributor.committeeMember | Molnar, Alyosha Christopher | |
| dc.date.accessioned | 2022-10-31T16:20:15Z | |
| dc.date.available | 2023-03-06T07:00:15Z | |
| dc.date.issued | 2022-08 | |
| dc.description | 143 pages | |
| dc.description.abstract | With growing needs for data-centric applications such as edge intelligence in recent years, the semiconductor industry has been actively looking for new computing hardware that involves high-speed and energy-efficient data processing solutions. Innovation in memory is critical in resolving the speed mismatch between memory and logic present in von Neumann-based computing architectures. Moving toward near-memory or in-memory computing architectures, which enable efficient data transfer between logic cores and memories, embedded non-volatile memories are arising as a strong candidate for dataintensive applications. In this work, ferroelectric field-effect transistors (FeFETs) are investigated as a memory element for such new computing platforms. The recent discovery of a ferroelectric nitride, ScAlN, shed light on the epitaxial nitride-based FeFET solution. Possessing several advantages for FeFET-based memories, ScAlN has the potential to outperform the widely-investigated Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>. The MBE-grown ScAlN exhibits ferroelectric properties that are highly desirable for achieving a sufficient memory window at reasonable operating voltages. The high-quality epitaxial interfaces are expected to help mitigate charge trapping issues reported in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based FeFETs. This work aims to manifest the advantages of ScAlN for FeFETs compared with other ferroelectric options and to demonstrate experimental efforts toward the III-nitride FeFETs. An Analytical FeFET model is used to simulate and compare the figures of merit of FeFETs based on various ferroelectrics. ScAlN, grown by reactive co-sputtering and MBE, is fabricated into capacitors and field-effect transistors (FETs), and the electrical properties of the devices are investigated. Despite some challenges in the growth and fabrication of the recent generation, ScAlN shows the potential as a high-k dielectric barrier for FETs and is expected to add a ferroelectric functionality to the III-nitride platform. | |
| dc.identifier.doi | https://doi.org/10.7298/18rh-4r83 | |
| dc.identifier.other | Lee_cornellgrad_0058F_13107 | |
| dc.identifier.other | http://dissertations.umi.com/cornellgrad:13107 | |
| dc.identifier.uri | https://hdl.handle.net/1813/111986 | |
| dc.language.iso | en | |
| dc.title | TOWARD III-NITRIDE BASED FERROELECTRIC HIGH ELECTRON MOBILITY TRANSISTORS | |
| dc.type | dissertation or thesis | |
| dcterms.license | https://hdl.handle.net/1813/59810.2 | |
| thesis.degree.discipline | Electrical and Computer Engineering | |
| thesis.degree.grantor | Cornell University | |
| thesis.degree.level | Doctor of Philosophy | |
| thesis.degree.name | Ph. D., Electrical and Computer Engineering |
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