The introduction of high-throughput combinatorial approaches for material discovery and optimization has led to the popularity of Lateral Gradient Laser Spike Annealing (lg-LSA), a rapid thermal annealing technique, which utilize temperature gradients to extract temperature-dependent material properties. This method reduces the need for numerous samples and saves time. Accurate temperature calibration is crucial for lg-LSA's success. Existing methods, such as thermocouples, have limitations that may not suit lg-LSA requirements. To achieve precise spatial and temporal resolution while remaining non-contact and non-destructive, thermoreflectance method is proposed for temperature calibration. This method leverages the linear effect of temperature on surface reflectivity, enabling high-resolution temperature measurements. Absolute calibration points, such as substrate melting points or thin-film phase changes, are used to calibrate the silicon wafer temperature profile using CO2 and diode laser system. Thermoreflectance-based temperature calibration allows for quick parameter tuning, identification of temperature thresholds, and characterization of transitional phases, enabling efficient material characterization and discovery. This approach holds promise for various fields, including electronics, photonics, and photovoltaics, potentially revolutionizing material research and accelerating technological advancements.