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Probing charge motion in next-generation semiconductors with scanned probe microscopy

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dc.contributor.authorDwyer, Ryan Patrick
dc.contributor.chairMarohn, John A.
dc.contributor.committeeMemberLee, Stephen
dc.contributor.committeeMemberLoring, Roger F.
dc.date.accessioned2018-04-26T14:17:43Z
dc.date.available2018-04-26T14:17:43Z
dc.date.issued2017-08-30
dc.description.abstractScanned probe microscopy has allowed researchers to explore spatial variations in charge generation and transport in solar-cell films prepared on a conductive substrate with a best-case resolution of 2 nanometers. In this thesis, we introduce new scanned probe measurements to measure light- and voltage-induced changes to capacitance, surface potential, and electric fields with better time resolution. We demonstrate the measurements on organic and perovskite semiconductors. First, we present a new method for measuring photocapacitance transients. We demonstrate the ability of this indirect, ``phase kick'' technique to record multi-exponential photocapacitance transients on timescales ranging from 40 microseconds to 10 milliseconds in the organic donor:acceptor blend PFB:F8BT. The technique's ability to measure subcycle, nanosecond charge dynamics is demonstrated by measuring the 34 nanosecond sample electrical charging time. Along with the measurement, we present an accurate approximate model for the cantilever dynamics during the photocapacitance measurement. We use the model to explain the origin of the signal in our new phasekick electric force microscopy measurement and the alternative feedback-free time-resolved electric force microscopy. We show that for sample time constants faster than the inverse cantilever angular frequency, feedback-free time-resolved electric force microscopy is sensitive mainly to the size of the abrupt phase shift induced by the abrupt step change in the tip-sample capacitive force. Second, we present a new method for measuring the vector electric field using frequency-modulated Kelvin probe force microscopy. During a Kelvin probe force microscopy linescan, we sinusoidally modulate the cantilever position along the direction perpendicular to the linescan. We determine the electric field along both the linescan direction and the modulation direction simultaneously by numerical differentiation and lock-in detection respectively. We demonstrate the technique by recording linescans of the in-plane electric field vector in the vicinity of a patch of trapped charge in a DPh-BTBT organic field-effect transistor. The measured electric field depends strongly on experimental parameters: the Kelvin probe force microscopy feedback loop bandwidth, the linescan speed, the position modulation amplitude, and the position modulation frequency. We demonstrate how to optimally choose these experimental parameters for our new vector electric field measurement.
dc.identifier.doihttps://doi.org/10.7298/X48P5XN7
dc.identifier.otherDwyer_cornellgrad_0058F_10508
dc.identifier.otherhttp://dissertations.umi.com/cornellgrad:10508
dc.identifier.otherbibid: 10361618
dc.identifier.urihttps://hdl.handle.net/1813/56941
dc.language.isoen_US
dc.rightsAttribution 4.0 International*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subjectPhysical chemistry
dc.subjectMaterials Science
dc.subjectorganic semiconductors
dc.subjectscanned probe microscopy
dc.titleProbing charge motion in next-generation semiconductors with scanned probe microscopy
dc.typedissertation or thesis
dcterms.licensehttps://hdl.handle.net/1813/59810
thesis.degree.disciplineChemistry and Chemical Biology
thesis.degree.grantorCornell University
thesis.degree.levelDoctor of Philosophy
thesis.degree.namePh. D., Chemistry and Chemical Biology

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