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dc.contributor.authorBalakrishnan, Vasanth
dc.date.accessioned2019-10-15T16:51:41Z
dc.date.available2021-08-29T06:00:24Z
dc.date.issued2019-08-30
dc.identifier.otherBalakrishnan_cornell_0058O_10615
dc.identifier.otherhttp://dissertations.umi.com/cornell:10615
dc.identifier.otherbibid: 11050767
dc.identifier.urihttps://hdl.handle.net/1813/67780
dc.description.abstractβ-Ga2O3 is a transparent conductive oxide and a relatively new member of the wide bandgap semiconductors family which has gained tremendous interest for power and RF electronics due to its ultra-wide bandgap, high breakdown field, and availability of high-quality cost-effective single-crystal wafers. The aim of this research is to use Molecular Beam Epitaxy (MBE) and explore the process conditions for growth of thin films related to β-Ga2O3 Metal Oxide Semiconductor Capacitor (MOSCAP) and Modulation Doped Field Effect Transistor (MODFET) device structures with excellent structural and electrical properties. The study of dielectrics and semiconductor/dielectric interfaces is critical for advancement of Ga2O3 devices research. The prospect of in-situ MBE grown aluminum oxide (Al2O3) dielectric for β-Ga2O3 based MOSCAPs is explored by comparing it against the conventional Atomic layer deposition (ALD) based Al2O3 dielectric. The properties of dielectric are shown to significantly depend on its crystallinity, morphology and density which in turn depend on the growth conditions. MBE grown Al2O3 dielectrics with properties comparable to their ALD based counterpart have been successfully achieved on (-201) oriented β-Ga2O3 substrates. The effect of substrate orientation, Al flux and post dielectric deposition annealing on properties of MBE grown Al2O3 dielectrics is also studied. This single chamber process of depositing metal/oxide/semiconductor structure could further enhance the promising electronic properties of β-Ga2O3 based devices. The study of β-Ga2O3 / (AlxGa1-x)2O3 heterostructure is of immense interest for the future of Ga2O3 MODFETs. The MBE process parameters are correlated to thegrowth rate, morphology, and Al composition and the various growth conditions of (AlxGa1-x)2O3 on (010) β-Ga2O3 substrates are explored. The effect of β-Ga2O3 substrate orientation on the structural properties of this heterostructure is also studied by comparing similar structures grown on (010) and (-201)oriented substrates. The resultant Ga2O3 / (AlxGa1-x)2O3 thin film with the highest quality can be doped to get the desired high electron mobility transistors.
dc.language.isoen_US
dc.subjectgallium oxide
dc.subjectMolecular Beam Epitaxy
dc.subjectElectrical engineering
dc.subjectMaterials Science
dc.subjectthin films
dc.subjectAluminum oxide
dc.subjectHeterostructure
dc.subjectMOSCAP
dc.subjectEngineering
dc.titleMBE GROWN ALUMINUM OXIDE AND ALUMINUM-GALLIUM OXIDE THIN FILMS FOR BETA-GALLIUM OXIDE POWER DEVICES
dc.typedissertation or thesis
thesis.degree.disciplineMaterials Science and Engineering
thesis.degree.grantorCornell University
thesis.degree.levelMaster of Science
thesis.degree.nameM.S., Materials Science and Engineering
dc.contributor.chairXing, Huili Grace
dc.contributor.committeeMemberJena, Debdeep
dcterms.licensehttps://hdl.handle.net/1813/59810
dc.identifier.doihttps://doi.org/10.7298/g99f-1611


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