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dc.contributor.authorHan, Yimo
dc.date.accessioned2018-10-23T13:22:36Z
dc.date.available2019-06-04T06:02:31Z
dc.date.issued2018-05-30
dc.identifier.otherHan_cornellgrad_0058F_10765
dc.identifier.otherhttp://dissertations.umi.com/cornellgrad:10765
dc.identifier.otherbibid: 10489492
dc.identifier.urihttps://hdl.handle.net/1813/59407
dc.description.abstractTwo-dimensional layered crystals are a promising class of materials for post-silicon electronics. Due to their atomic thinness, flexibility, and versatile electrical properties (i.e. conductors, semiconductors, and insulators), we can envision future ultra-small, flexible computers completely comprised of various two-dimensional materials. For this application, lateral heterostructures of two-dimensional materials play a major role in the realization of wholly two- dimensional devices, as they are the fundamental elements in a circuit, such as p-n junctions and metal-semiconductor contacts. This dissertation will employ transmission electron microscopy and related techniques to address how different two-dimensional materials merge to form lateral heterostructures, specifically between two distinct two-dimensional semiconductors (analogous to p-n junctions) and two-dimensional conductor- semiconductor heterostructures (analogous to metal-semiconductor contacts). Within the heterostructures between two semiconductors, Chapter 2 and 3 will discuss atomically sharp interfaces and gradual interfaces in lateral heterostructures, respectively. Chapter 4 will describe the conductor-semiconductor interconnects between two-dimensional materials with dissimilar lattice structures. Our results demonstrate how the strain is relaxed in epitaxial lateral heterostructures, as well as how the heterostructure between crystallographically distinct two-dimensional materials forms. These findings can unravel how to use or engineer distortions in two-dimensional lateral heterojunctions, predict the mechanical strength and devices performance, and inform the mechanism of chemical synthesis at the interface between atomically thin films.
dc.language.isoen_US
dc.subjectChemistry
dc.subjectPhysics
dc.subjectMaterials Science
dc.subject2-D materials
dc.subjectADF-STEM
dc.subjectdislocation
dc.subjectEMPAD
dc.subjectheterostructures
dc.subjectElectron Microscopy
dc.titleUNCOVERING ATOMIC STRUCTURES IN TWO-DIMENSIONAL LATERAL HETEROJUNCTIONS
dc.typedissertation or thesis
thesis.degree.disciplineApplied Physics
thesis.degree.grantorCornell University
thesis.degree.levelDoctor of Philosophy
thesis.degree.namePh. D., Applied Physics
dc.contributor.chairMuller, David Anthony
dc.contributor.committeeMemberPark, Jiwoong
dc.contributor.committeeMemberMcEuen, Paul L.
dcterms.licensehttps://hdl.handle.net/1813/59810
dc.identifier.doihttps://doi.org/10.7298/X4G73BZV


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