Recent Submissions

  • Low-Frequency Noise in III-V Nitride 2D Electron and Hole Gases 

    Leclerc, Nima (2020-05-23)
    Following the use of the Mg-doped GaN for p-channel transistor channels, the manipulation of holes and their interactions with phonons, impurities, and dislocations remains a fundamental challenge. p-channel GaN electronics ...

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