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dc.contributor.authorPai, Yun-Yien_US
dc.date.accessioned2014-07-28T19:25:07Z
dc.date.available2019-05-26T06:01:05Z
dc.date.issued2014-05-25en_US
dc.identifier.otherbibid: 8641256
dc.identifier.urihttps://hdl.handle.net/1813/37147
dc.description.abstractThis thesis summarizes my work on characterizing isolated defects in zinc oxide (ZnO). In chapter 1, I will briefly review the major strength of quantum information processing over classical computation. I will then review the basic properties of nitrogen-vacancy centers, the most-studied point defect species in diamond, and how they motivate the search for defects of similar properties in other semiconductor materials for defect-based quantum information processing. In chapter 2, I will describe our initial study on the optical properties of successfully isolated defects in ZnO: their fluorescence spectra, excited state lifetimes, and their photodynamics including blinking. In chapter 3, I will detail my work on extending the capability of an atomic force microscope to include simultaneous imaging in a confocal geometry. In chapter 4, I will discuss possible directions for our defect studies.en_US
dc.language.isoen_USen_US
dc.subjectZnO Defectsen_US
dc.subjectQuantum Information Processingen_US
dc.subjectAFMen_US
dc.titleCharacterization Of Single Defects In Zinc Oxideen_US
dc.typedissertation or thesisen_US
thesis.degree.disciplineApplied Physics
thesis.degree.grantorCornell Universityen_US
thesis.degree.levelMaster of Science
thesis.degree.nameM.S., Applied Physics
dc.contributor.chairFuchs, Gregory Daviden_US
dc.contributor.committeeMemberMuller, David Anthonyen_US


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