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Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices

Author
Chung, Chen-Yang
Abstract
Thermal annealing of sputtered InGaZnO4 thin films was studied as a function of annealing ambients under controlled partial pressures of oxygen and water vapor. Water vapor is shown to be critical for obtaining high performance devices with performance improving at water vapor levels substantially higher than normally present in air. The optimized performance of non-reactive sputter fabricated IGZO devices was obtained with post-annealing in air with a 4.5 Torr water vapor pressure. We propose that, in the post-annealing process, water vapor plays a key role due to its small size and high diffusivity, compared to molecular oxygen, allowing it to more easily compensate oxygen vacancies in the IGZO matrix. iii
Date Issued
2013-08-19Subject
IGZO; TFT; device; anneal; water vapor
Committee Chair
Thompson, Michael Olgar
Committee Member
Kan, Edwin Chihchuan
Degree Discipline
Materials Science and Engineering
Degree Name
M.S., Materials Science and Engineering
Degree Level
Master of Science
Type
dissertation or thesis