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dc.contributor.authorLu, Jieen_US
dc.date.accessioned2009-08-19T17:04:57Z
dc.date.available2014-08-19T06:20:27Z
dc.date.issued2009-08-19T17:04:57Z
dc.identifier.otherbibid: 6681470
dc.identifier.urihttps://hdl.handle.net/1813/13613
dc.description.abstractSilicon carbide (SiC) based semiconductor electronic devices and circuits are presently being developed for advantageous use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. However, there has been little work on the heterostructure field effect transistor, which can be developed to be high electron mobility transistor (HEMT). This dissertation presents the whole process for the SiC heterostructure field effect transistor: Modeling, material growth, fabrication and characterizations. First, the modeling and simulation of the two dimensional electron gas in SiC heterostructure are presented. Next, we will discuss the epitaxy growth for the SiC heterostructure. And then, we show the device processing of the heterostructure field effect transistor and high electron mobility transistor (HEMT). Finally, both materials and devices are characterized by various optical and electrical methods.en_US
dc.language.isoen_USen_US
dc.titleSilicon Carbide Heterostructure High Electron Mobility Transistors: Modeling, Material Growth, Processing And Characterizationsen_US
dc.typedissertation or thesisen_US


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