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dc.contributor.authorGong, Mingli
dc.date.accessioned2021-12-20T20:34:27Z
dc.date.issued2021-08
dc.identifier.otherGong_cornell_0058O_11218
dc.identifier.otherhttp://dissertations.umi.com/cornell:11218
dc.identifier.urihttps://hdl.handle.net/1813/110405
dc.description132 pages
dc.description.abstractIII-nitride semiconductors have received much attention for its optical and electrical applications. One challenge is to achieve the sub-300 nm ultraviolet diodes. High Al-content AlGaN-based technology grown on single crystalline AlN buffer layer is one of the most promising ways. However, due to the poor point defects control, high dislocation density, doping difficulties, and alloy fluctuations of AlGaN, it is hard to control the electron conduction which leads to the low efficiency of this technology. To solve this problem, it is essential to grow high quality AlGaN films. Additionally, N-polar AlN could enhance emission, injection, and collection efficiency with low buffer leak current. To check the quality of AlGaN/AlN, TEM (Transmission Electron Microscopy) is utilized, which provides high resolution atomic images with the information of crystal structures, grain boundaries, dislocations, and point defects. With the x-ray detector, local element concentrations can be calculated from EDX (Energy Dispersive X-ray). In this study, we characterized the structure and quality of various AlGaN and N-polar AlN samples by TEM and other techniques and proposed explanations for the phenomena we observed.
dc.language.isoen
dc.subjectAlGaN
dc.subjectAlloy fluctuation
dc.subjectFilm quality
dc.subjectN-polar AlN
dc.subjectTEM
dc.subjectWide band-gap semiconductor
dc.titleCHARACTERIZATION OF AlGaN AND N-POLAR AlN EPITAXIAL FILMS
dc.typedissertation or thesis
dc.description.embargo2023-09-10
thesis.degree.disciplineMaterials Science and Engineering
thesis.degree.grantorCornell University
thesis.degree.levelMaster of Science
thesis.degree.nameM.S., Materials Science and Engineering
dc.contributor.chairXing, H. Grace
dc.contributor.committeeMemberJena, Debdeep
dcterms.licensehttps://hdl.handle.net/1813/59810
dc.identifier.doihttps://doi.org/10.7298/0a2f-rx55


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