β-Ga2O3 recently gained much attention for its promising future for high-power electronic devices due to its ultra-wide bandgap (~4.9 eV), high breakdown field (~8MV/cm) and commercially available high-quality single-crystal wafers. Its Baliga’s Figure of Merit (BFOM) is ~4 times as large as those of GaN and SiC for power efficiency. However, material processing is still in its infancy for high-performance devices fabrication. In this work, I explore different regions of processing conditions. Particularly, dry etching and Ohmic contact are studied and optimized for device fabrication. Electronic devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and vertical wrap-around-gate fin-shape FETs (vFinFETs) are fabricated using optimized processing conditions and achieved current modulations.