ABSTRACT Dielectrics have been extensively investigated in IC technology for capacitor and transistor applications. The discovery of good amorphous thin-film dielectric materials, with high dielectric constants, low dissipation factors and high breakdown fields for charge storage applications has been of great importance. To identify potential new dielectrics, the composition-spread technique and high throughput experimentation have been widely used to explore materials with excellent properties. In this study, the dielectric properties of amorphous composition-spread thin films were studied. The material systems studied in this work includes Bi-Ti-O, Bi-Ta-O, Bi-Zr-O, Bi-Nb-O and the single composition BaTiO3. Films were deposited by RF magnetron co-sputtering. The Bi-Ti-O composition spread was also annealed via laser spike annealing to explore phase formations, which were further analyzed with synchrotron x-ray diffraction. The dielectric properties of amorphous composition-spread thin films were characterized and discussed. In the composition range of 0.5